Thin germanium dioxide film with a high quality interface formed in a direct neutral beam oxidation process

Akira Wada, Seiji Samukawa, Rui Zhang, Shinichi Takagi

研究成果: Conference contribution

1 被引用数 (Scopus)

抄録

Germanium dioxide (GeO2) thin film with a high-quality interface was directly formed by using a damage-free and low-temperature neutral beam oxidation (NBO) process. GeO2 film with little suboxide could be formed even at a low substrate temperature of 300°C because of the extremely low activation energy (Ea) oxidation resulting from bombardment with energetic oxygen neutral-beams of 5 eV. A high-quality GeO2/Ge interface with an low interface state density (Dit) of less than 1 × 1011 cm2eV1 was created by combining the NBO process with a hydrogen (H) radical native oxide removal treatment.

本文言語English
ホスト出版物のタイトル2012 Proceedings of the European Solid-State Device Research Conference, ESSDERC 2012
ページ85-88
ページ数4
DOI
出版ステータスPublished - 2012 12月 11
イベント42nd European Solid-State Device Research Conference, ESSDERC 2012 - Bordeaux, France
継続期間: 2012 9月 172012 9月 21

出版物シリーズ

名前European Solid-State Device Research Conference
ISSN(印刷版)1930-8876

Other

Other42nd European Solid-State Device Research Conference, ESSDERC 2012
国/地域France
CityBordeaux
Period12/9/1712/9/21

ASJC Scopus subject areas

  • 電子工学および電気工学
  • 安全性、リスク、信頼性、品質管理

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