Thin-film transistors fabricated from semiconductor-enriched single-wall carbon nanotubes

Solution-processed thin-film transistors (TFTs) were fabricated from semiconductor-enriched single-wall carbon nanotubes (SWCNTs). By coating with a self-assembled monolayer of aminosilanes, one drop of SWCNT solution produced a uniform SWCNT random network on a SiO₂/Si substrate. Thin films prepared by this method were used to fabricate SWCNT-TFTs and high-yield fabrication and stable transfer characteristics were achieved. We prepared three types of TFTs from pristine, metal-enriched, and semiconductorenriched SWCNTs. All TFTs fabricated from semiconductorenriched SWCNTs exhibited on/off ratios greater than 10⁴, whereas the other TFTs had much lower on/off ratios. This result clearly demonstrates the advantage of using semiconductor-enriched SWCNTs for device applications and is expected to lead to integrated circuits made from SWCNTs in the near future.