Thin-film transistors fabricated from semiconductor-enriched single-wall carbon nanotubes

Shunjiro Fujii, Takeshi Tanaka, Yasumitsu Miyata, Hiroshi Suga, Yasuhisa Naitoh, Takeo Minari, Tetsuhiko Miyadera, Kazuhito Tsukagoshi, Hiromichi Kataura

研究成果: Article査読

2 被引用数 (Scopus)

抄録

Solution-processed thin-film transistors (TFTs) were fabricated from semiconductor-enriched single-wall carbon nanotubes (SWCNTs). By coating with a self-assembled monolayer of aminosilanes, one drop of SWCNT solution produced a uniform SWCNT random network on a SiO2/Si substrate. Thin films prepared by this method were used to fabricate SWCNT-TFTs and high-yield fabrication and stable transfer characteristics were achieved. We prepared three types of TFTs from pristine, metal-enriched, and semiconductorenriched SWCNTs. All TFTs fabricated from semiconductorenriched SWCNTs exhibited on/off ratios greater than 104, whereas the other TFTs had much lower on/off ratios. This result clearly demonstrates the advantage of using semiconductor-enriched SWCNTs for device applications and is expected to lead to integrated circuits made from SWCNTs in the near future.

本文言語English
ページ(範囲)2849-2852
ページ数4
ジャーナルPhysica Status Solidi (B) Basic Research
246
11-12
DOI
出版ステータスPublished - 2009 12月
外部発表はい

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学

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