Thin-film deposition of silicon-incorporated diamond-like carbon by plasma-enhanced chemical vapor deposition using monomethylsilane as a silicon source

Hideki Nakazawa, Yuhki Asai, Takeshi Kinoshita, Maki Suemitsu, Toshimi Abe, Kanji Yasui, Takashi Itoh, Tetsuo Endoh, Yuzuru Narita, Atsushi Konno, Yoshiharu Enta, Masao Mashita

研究成果: Article査読

16 被引用数 (Scopus)

抄録

We have deposited Si-incorporated diamond-like carbon (DLC) films by radio-frequency plasma-enhanced chemical vapor deposition using methane, argon, and monomethylsilane (MMS; CH3SiH3) as a silicon source, and have investigated the structural and mechanical properties of the films. The deposition rate and Si atomic fraction [Si/(Si + C)] in the DLC films increased with increasing MMS flow ratio. The Si fraction was approximately 13% at a MMS flow ratio [MMS/(MMS + CH4)] of 3%, showing that the deposition using a combination of CH4 and MMS produces films with high Si content compared with those deposited using conventional C and Si sources. The Si fraction was also found to increase with a decrease in Ar flow rate under a constant MMS flow ratio. Many particles composed mainly of Si, whose size was 0.3-1 μm in diameter, were observed on the surface when deposition was carried out at MMS flow ratios of 15 and 30%. Compressive internal stress in the films decreased with the MMS flow ratio and/or with the Ar flow rate. The decrease in internal stress is probably due to the relaxation of a three-dimensional rigid network by the formation of Si-C and Si-H bonds in the films as well as Ar+ ion bombardment.

本文言語English
ページ(範囲)8491-8497
ページ数7
ジャーナルJapanese journal of applied physics
47
11
DOI
出版ステータスPublished - 2008 11 14

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(全般)

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