TY - JOUR
T1 - Thin-film deposition of silicon-incorporated diamond-like carbon by plasma-enhanced chemical vapor deposition using monomethylsilane as a silicon source
AU - Nakazawa, Hideki
AU - Asai, Yuhki
AU - Kinoshita, Takeshi
AU - Suemitsu, Maki
AU - Abe, Toshimi
AU - Yasui, Kanji
AU - Itoh, Takashi
AU - Endoh, Tetsuo
AU - Narita, Yuzuru
AU - Konno, Atsushi
AU - Enta, Yoshiharu
AU - Mashita, Masao
PY - 2008/11/14
Y1 - 2008/11/14
N2 - We have deposited Si-incorporated diamond-like carbon (DLC) films by radio-frequency plasma-enhanced chemical vapor deposition using methane, argon, and monomethylsilane (MMS; CH3SiH3) as a silicon source, and have investigated the structural and mechanical properties of the films. The deposition rate and Si atomic fraction [Si/(Si + C)] in the DLC films increased with increasing MMS flow ratio. The Si fraction was approximately 13% at a MMS flow ratio [MMS/(MMS + CH4)] of 3%, showing that the deposition using a combination of CH4 and MMS produces films with high Si content compared with those deposited using conventional C and Si sources. The Si fraction was also found to increase with a decrease in Ar flow rate under a constant MMS flow ratio. Many particles composed mainly of Si, whose size was 0.3-1 μm in diameter, were observed on the surface when deposition was carried out at MMS flow ratios of 15 and 30%. Compressive internal stress in the films decreased with the MMS flow ratio and/or with the Ar flow rate. The decrease in internal stress is probably due to the relaxation of a three-dimensional rigid network by the formation of Si-C and Si-H bonds in the films as well as Ar+ ion bombardment.
AB - We have deposited Si-incorporated diamond-like carbon (DLC) films by radio-frequency plasma-enhanced chemical vapor deposition using methane, argon, and monomethylsilane (MMS; CH3SiH3) as a silicon source, and have investigated the structural and mechanical properties of the films. The deposition rate and Si atomic fraction [Si/(Si + C)] in the DLC films increased with increasing MMS flow ratio. The Si fraction was approximately 13% at a MMS flow ratio [MMS/(MMS + CH4)] of 3%, showing that the deposition using a combination of CH4 and MMS produces films with high Si content compared with those deposited using conventional C and Si sources. The Si fraction was also found to increase with a decrease in Ar flow rate under a constant MMS flow ratio. Many particles composed mainly of Si, whose size was 0.3-1 μm in diameter, were observed on the surface when deposition was carried out at MMS flow ratios of 15 and 30%. Compressive internal stress in the films decreased with the MMS flow ratio and/or with the Ar flow rate. The decrease in internal stress is probably due to the relaxation of a three-dimensional rigid network by the formation of Si-C and Si-H bonds in the films as well as Ar+ ion bombardment.
KW - Argon
KW - Chemical vapor deposition
KW - Diamond-like carbon
KW - Internal stress
KW - Methane
KW - Monomethylsilane
KW - Structural properties
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U2 - 10.1143/JJAP.47.8491
DO - 10.1143/JJAP.47.8491
M3 - Article
AN - SCOPUS:58749094291
VL - 47
SP - 8491
EP - 8497
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 11
ER -