抄録
The thickness distribution in RF diode sputtered ultra thin silicon dioxide films were measured. According to the measurements, the thickness distribution in silicon dioxide film is found to be more uniform as compared with that obtained for RF diode sputtered ultra thin platinum film having the almost same thickness as that of silicon dioxide film. The existence of pinholes was detected down to 0. 24% for the total are of nearly 2. 5 mm**2.
本文言語 | English |
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ホスト出版物のタイトル | Unknown Host Publication Title |
出版社 | Int Union for Vac Sci, Tech and Appl |
ページ | 2157-2160 |
ページ数 | 4 |
巻 | 3 |
出版ステータス | Published - 1977 |
イベント | Proc of the Int Vac Congr, 7th, and the Int Conf on Solid Surf, 3rd, of the Int Union for Vac Sci, Tech and Appl - Vienna, Austria 継続期間: 1977 9月 12 → 1977 9月 16 |
Other
Other | Proc of the Int Vac Congr, 7th, and the Int Conf on Solid Surf, 3rd, of the Int Union for Vac Sci, Tech and Appl |
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City | Vienna, Austria |
Period | 77/9/12 → 77/9/16 |
ASJC Scopus subject areas
- 工学(全般)