THICKNESS DISTRIBUTION IN THIN FILM STUDIED BY X-RAY EXCITED PHOTOELECTRON SPECTROSCOPY.

Takeo Hattori

    研究成果: Chapter

    4 被引用数 (Scopus)

    抄録

    The thickness distribution in RF diode sputtered ultra thin silicon dioxide films were measured. According to the measurements, the thickness distribution in silicon dioxide film is found to be more uniform as compared with that obtained for RF diode sputtered ultra thin platinum film having the almost same thickness as that of silicon dioxide film. The existence of pinholes was detected down to 0. 24% for the total are of nearly 2. 5 mm**2.

    本文言語English
    ホスト出版物のタイトルUnknown Host Publication Title
    出版社Int Union for Vac Sci, Tech and Appl
    ページ2157-2160
    ページ数4
    3
    出版ステータスPublished - 1977
    イベントProc of the Int Vac Congr, 7th, and the Int Conf on Solid Surf, 3rd, of the Int Union for Vac Sci, Tech and Appl - Vienna, Austria
    継続期間: 1977 9 121977 9 16

    Other

    OtherProc of the Int Vac Congr, 7th, and the Int Conf on Solid Surf, 3rd, of the Int Union for Vac Sci, Tech and Appl
    CityVienna, Austria
    Period77/9/1277/9/16

    ASJC Scopus subject areas

    • Engineering(all)

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