TY - JOUR
T1 - Thickness-dependent surface proton conduction in (111) oriented yttria-stabilized zirconia thin film
AU - Takayanagi, Makoto
AU - Tsuchiya, Takashi
AU - Kawamura, Kinya
AU - Minohara, Makoto
AU - Horiba, Koji
AU - Kumigashira, Hiroshi
AU - Higuchi, Tohru
N1 - Publisher Copyright:
© 2017 Elsevier B.V.
Copyright:
Copyright 2017 Elsevier B.V., All rights reserved.
PY - 2017/11/15
Y1 - 2017/11/15
N2 - Polycrystalline Zr0.92Y0.08O2 (YSZ) thin films were prepared by RF magnetron sputtering. 80- and 160-nm thin films exhibited (111) orientation and a polycrystalline structure, respectively. The 80-nm thin film had larger distortion than the 160-nm thin film. While the 80-nm thin film and a 120-nm thin film exhibited proton conduction, the 160-nm thin film did not, indicating that surface proton conduction can depend on film thickness. The activation energy of the 80- and 120-nm thin films measured in a wet atmosphere (0.52 eV) was about half of that measured in a dry atmosphere. The enhancement of conductivity for the thin films may be attributed to distortion, which may change the structure around an oxygen vacancy at the YSZ grain surface, accompanied by possible enhancement of H2O adsorption. H2O-annealed thin film had a hydrogen-induced level in the band gap energy region. This is the first observation of hydrogen-induced level at the surface state of the YSZ thin film obtained by X-ray absorption spectroscopy.
AB - Polycrystalline Zr0.92Y0.08O2 (YSZ) thin films were prepared by RF magnetron sputtering. 80- and 160-nm thin films exhibited (111) orientation and a polycrystalline structure, respectively. The 80-nm thin film had larger distortion than the 160-nm thin film. While the 80-nm thin film and a 120-nm thin film exhibited proton conduction, the 160-nm thin film did not, indicating that surface proton conduction can depend on film thickness. The activation energy of the 80- and 120-nm thin films measured in a wet atmosphere (0.52 eV) was about half of that measured in a dry atmosphere. The enhancement of conductivity for the thin films may be attributed to distortion, which may change the structure around an oxygen vacancy at the YSZ grain surface, accompanied by possible enhancement of H2O adsorption. H2O-annealed thin film had a hydrogen-induced level in the band gap energy region. This is the first observation of hydrogen-induced level at the surface state of the YSZ thin film obtained by X-ray absorption spectroscopy.
KW - Oxygen vacancy
KW - Proton conduction
KW - Yttria-stabilized zirconia
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U2 - 10.1016/j.ssi.2017.09.003
DO - 10.1016/j.ssi.2017.09.003
M3 - Article
AN - SCOPUS:85029600742
VL - 311
SP - 46
EP - 51
JO - Solid State Ionics
JF - Solid State Ionics
SN - 0167-2738
ER -