Thickness dependent electrical characteristics of AlGaN/GaN MOSHEMT with La2O3 gate dielectrics

J. Chen, K. Tsuneishi, K. Kakushima, P. Ahmet, Y. Kataoka, A. Nishiyama, N. Sugii, K. Tsutsui, K. Natori, T. Hattori, H. Iwai

研究成果: Conference contribution

抜粋

Thickness dependence of La2O3 gate dielectrics on electrical characteristics for AlGaN/GaN MOSHFET has been investigated. Positive shift in threshold voltage has been observed with thicker La2O 3 film thickness. Reduction in leakage current has obtained with thicker film.

元の言語English
ホスト出版物のタイトルGallium Nitride and Silicon Carbide Power Technologies 2
ページ353-357
ページ数5
エディション3
DOI
出版物ステータスPublished - 2012
外部発表Yes
イベント2nd Symposium on Gallium Nitride (GaN) and Silicon Carbide (SiC) Power Technologies - ECS Fall 2012 Meeting - Honolulu, HI, United States
継続期間: 2012 10 72012 10 12

出版物シリーズ

名前ECS Transactions
番号3
50
ISSN(印刷物)1938-5862
ISSN(電子版)1938-6737

Other

Other2nd Symposium on Gallium Nitride (GaN) and Silicon Carbide (SiC) Power Technologies - ECS Fall 2012 Meeting
United States
Honolulu, HI
期間12/10/712/10/12

ASJC Scopus subject areas

  • Engineering(all)

フィンガープリント Thickness dependent electrical characteristics of AlGaN/GaN MOSHEMT with La<sub>2</sub>O<sub>3</sub> gate dielectrics' の研究トピックを掘り下げます。これらはともに一意のフィンガープリントを構成します。

  • これを引用

    Chen, J., Tsuneishi, K., Kakushima, K., Ahmet, P., Kataoka, Y., Nishiyama, A., Sugii, N., Tsutsui, K., Natori, K., Hattori, T., & Iwai, H. (2012). Thickness dependent electrical characteristics of AlGaN/GaN MOSHEMT with La2O3 gate dielectrics. : Gallium Nitride and Silicon Carbide Power Technologies 2 (3 版, pp. 353-357). (ECS Transactions; 巻数 50, 番号 3). https://doi.org/10.1149/05003.0353ecst