Thermopower and thermally induced domain wall motion in (Ga, Mn)As

Kjetil M.D. Hals, Arne Brataas, Gerrit E.W. Bauer

研究成果: Article査読

20 被引用数 (Scopus)

抄録

We study two reciprocal thermal effects in the ferromagnetic semiconductor (Ga, Mn)As by scattering theory: domain wall motion induced by a temperature gradient and heat currents pumped by a moving domain wall. The effective out-of-plane thermal spin transfer torque parameter PQ βQ, which governs the coupling between heat currents and a magnetic texture, is found to be of the order of unity. Unpinned domain walls are predicted to move at speed 10 m/s in temperature gradients of the order 10 K/μm. The cooling power of a moving domain wall only compensates the heating due to friction losses at ultra-low domain wall velocities of about 0.07 m/s. The Seebeck coefficient is found to be of the order 100-500 μV/K at T = 10 K, in good agreement with recent experiments.

本文言語English
ページ(範囲)461-465
ページ数5
ジャーナルSolid State Communications
150
11-12
DOI
出版ステータスPublished - 2010 3月
外部発表はい

ASJC Scopus subject areas

  • 化学 (全般)
  • 凝縮系物理学
  • 材料化学

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