Thermoelectric properties of boron-rich boride composites prepared through eutectic and peritectic reactions

Takashi Goto, Jianhui Li, Toshio Hirai

研究成果: Paper査読

4 被引用数 (Scopus)

抄録

Boron-rich boride composites were prepared by arc-melting in an argon atmosphere, and their microstructures and thermoelectric properties were studied. B4C-TiB2 system was quasi-binary, and the typical lamellar structures indicating a eutectic reaction were observed. The eutectic composition was 25 mol%TiB2, and a 6 mol%TiB2-B4C composite showed the greatest ZT values of 0.55 at 1100 K. The boron-rich region of Si-B-C system contained a peritectic reaction. The specimens consisting of SiB14, B4C and free-Si were prepared. The greatest ZT value of this system was 0.4 at 1100 K for a specimen in which SiB14 is the main phase with several 10 mol% of B4C and free-Si.

本文言語English
ページ574-577
ページ数4
出版ステータスPublished - 1998 12 1
イベントProceedings of the 1998 17th International Conference on Thermoelectrics, ICT - Nagoya, Jpn
継続期間: 1998 5 241998 5 28

Other

OtherProceedings of the 1998 17th International Conference on Thermoelectrics, ICT
CityNagoya, Jpn
Period98/5/2498/5/28

ASJC Scopus subject areas

  • 工学(全般)

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