Thermally induced structural characteristics of pentacene thin films

Dong Guo, Susumu Ikeda, Koichiro Saiki

研究成果: Article査読

3 被引用数 (Scopus)

抄録

The influence of postdeposition thermal treatment on the structural characteristics of vacuum deposited pentacene thin films was systematically investigated. With increasing annealing temperature, the film crystallinity decreased regularly and significantly, while structural analysis by using the paracrystal theory revealed an increased vertical coherent diffraction domain size. Influence of the structural evolution on the thin film transistor performance was demonstrated by a variable temperature structural and electrical characterization. The results indicate that a thermally induced structural evolution should be generally taken into account for understanding the charge transport nature of the materials.

本文言語English
論文番号113520
ジャーナルJournal of Applied Physics
105
11
DOI
出版ステータスPublished - 2009
外部発表はい

ASJC Scopus subject areas

  • 物理学および天文学(全般)

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