Thermal stability of TiN/HfSiON gate stack structures studied by synchrotron-radiation photoemission spectroscopy

S. Toyoda; H. Kamada; H. Kumigashira; M. Oshima; K. Iwamoto; T. Sukegawa; Z. Liu

doi:10.1063/1.3532846

Thermal stability of TiN/HfSiON gate stack structures studied by synchrotron-radiation photoemission spectroscopy

S. Toyoda, H. Kamada, H. Kumigashira, M. Oshima, K. Iwamoto, T. Sukegawa, Z. Liu

研究成果: Article › 査読

3 被引用数 (Scopus)

抄録

We have investigated the thermal stability of TiN/HfSiON gate stack structures using synchrotron-radiation photoemission spectroscopy. Spectral intensities of the Si-oxide components in Si 2p core-level spectra systematically increase with annealing temperature, which strongly depends on the thickness of the TiN metal gate layer. Changes brought by annealing procedures in depth profiles of atomic concentration indicate segregation of Si-atoms at the TiN surface. Furthermore, chemical-state-resolved depth analyses by angle-resolved photoemission spectroscopy suggest formation of TiSi _x and HfN_y components due to chemical bond breaking in the HfSiON layer during TiN film growth. This can be related to the degradation of thermal stability.

本文言語	English
論文番号	262903
ジャーナル	Applied Physics Letters
巻	97
号	26
DOI	https://doi.org/10.1063/1.3532846
出版ステータス	Published - 2010 12 27
外部発表	はい

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

文献へのアクセス

10.1063/1.3532846

フィンガープリント「Thermal stability of TiN/HfSiON gate stack structures studied by synchrotron-radiation photoemission spectroscopy」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル

@article{1213abce505e44c9849f4bc364b0fc24,

title = "Thermal stability of TiN/HfSiON gate stack structures studied by synchrotron-radiation photoemission spectroscopy",

abstract = "We have investigated the thermal stability of TiN/HfSiON gate stack structures using synchrotron-radiation photoemission spectroscopy. Spectral intensities of the Si-oxide components in Si 2p core-level spectra systematically increase with annealing temperature, which strongly depends on the thickness of the TiN metal gate layer. Changes brought by annealing procedures in depth profiles of atomic concentration indicate segregation of Si-atoms at the TiN surface. Furthermore, chemical-state-resolved depth analyses by angle-resolved photoemission spectroscopy suggest formation of TiSi x and HfNy components due to chemical bond breaking in the HfSiON layer during TiN film growth. This can be related to the degradation of thermal stability.",

author = "S. Toyoda and H. Kamada and H. Kumigashira and M. Oshima and K. Iwamoto and T. Sukegawa and Z. Liu",

note = "Funding Information: The authors would like to thank the Semiconductor Leading Edge Technologies, Inc. (Selete) for providing the high- gate dielectric samples. This work was also supported by the Semiconductor Technology Academic Research Center (STARC). Synchrotron-radiation photoemission measurements were performed under the project 08S2-003 at the Institute of Materials Structure Science in KEK.",

year = "2010",

month = dec,

day = "27",

doi = "10.1063/1.3532846",

language = "English",

volume = "97",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "26",

}

TY - JOUR

T1 - Thermal stability of TiN/HfSiON gate stack structures studied by synchrotron-radiation photoemission spectroscopy

AU - Toyoda, S.

AU - Kamada, H.

AU - Kumigashira, H.

AU - Oshima, M.

AU - Iwamoto, K.

AU - Sukegawa, T.

AU - Liu, Z.

N1 - Funding Information: The authors would like to thank the Semiconductor Leading Edge Technologies, Inc. (Selete) for providing the high- gate dielectric samples. This work was also supported by the Semiconductor Technology Academic Research Center (STARC). Synchrotron-radiation photoemission measurements were performed under the project 08S2-003 at the Institute of Materials Structure Science in KEK.

PY - 2010/12/27

Y1 - 2010/12/27

N2 - We have investigated the thermal stability of TiN/HfSiON gate stack structures using synchrotron-radiation photoemission spectroscopy. Spectral intensities of the Si-oxide components in Si 2p core-level spectra systematically increase with annealing temperature, which strongly depends on the thickness of the TiN metal gate layer. Changes brought by annealing procedures in depth profiles of atomic concentration indicate segregation of Si-atoms at the TiN surface. Furthermore, chemical-state-resolved depth analyses by angle-resolved photoemission spectroscopy suggest formation of TiSi x and HfNy components due to chemical bond breaking in the HfSiON layer during TiN film growth. This can be related to the degradation of thermal stability.

AB - We have investigated the thermal stability of TiN/HfSiON gate stack structures using synchrotron-radiation photoemission spectroscopy. Spectral intensities of the Si-oxide components in Si 2p core-level spectra systematically increase with annealing temperature, which strongly depends on the thickness of the TiN metal gate layer. Changes brought by annealing procedures in depth profiles of atomic concentration indicate segregation of Si-atoms at the TiN surface. Furthermore, chemical-state-resolved depth analyses by angle-resolved photoemission spectroscopy suggest formation of TiSi x and HfNy components due to chemical bond breaking in the HfSiON layer during TiN film growth. This can be related to the degradation of thermal stability.

UR - http://www.scopus.com/inward/record.url?scp=78650904683&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=78650904683&partnerID=8YFLogxK

U2 - 10.1063/1.3532846

DO - 10.1063/1.3532846

M3 - Article

AN - SCOPUS:78650904683

VL - 97

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 26

M1 - 262903

ER -