Thermal stability of TiN/HfSiON gate stack structures studied by synchrotron-radiation photoemission spectroscopy

S. Toyoda, H. Kamada, H. Kumigashira, M. Oshima, K. Iwamoto, T. Sukegawa, Z. Liu

研究成果: Article査読

3 被引用数 (Scopus)

抄録

We have investigated the thermal stability of TiN/HfSiON gate stack structures using synchrotron-radiation photoemission spectroscopy. Spectral intensities of the Si-oxide components in Si 2p core-level spectra systematically increase with annealing temperature, which strongly depends on the thickness of the TiN metal gate layer. Changes brought by annealing procedures in depth profiles of atomic concentration indicate segregation of Si-atoms at the TiN surface. Furthermore, chemical-state-resolved depth analyses by angle-resolved photoemission spectroscopy suggest formation of TiSi x and HfNy components due to chemical bond breaking in the HfSiON layer during TiN film growth. This can be related to the degradation of thermal stability.

本文言語English
論文番号262903
ジャーナルApplied Physics Letters
97
26
DOI
出版ステータスPublished - 2010 12 27
外部発表はい

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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