Thermal stability of fullerene (C70) on the Si(100) 2×1 surface studied with FI-STM

Xiang Dong Wang, Qikun Xue, T. Hashizume, H. Shinohara, Y. Saito, Y. Nishina, T. Sakurai

    研究成果: Article査読

    3 被引用数 (Scopus)

    抄録

    We have studied the thermal stability of fullerene C70 adsorbed on the Si(100)2×1 surface with the field ion-scanning tunneling microscope. The results show that the first layer of C70 adsorbed considerably strongly due to the existence of Si dangling bonds on the surface. The first layer passivated the surface efficiently so that the multilayer crystalline film could be grown as close-packing array. The C70 above the first layer can be easily desorbed at temperatures above approximately 250°C, which is similar to that of bulk C70. In contrast to that, the first layer remains stable without any evidence of cage breaking or reordering until at temperatures above 1000°C, resulting in well-ordered islands: β-SiC(100)3×2 surface, according to our STM observations. The present work reveals a novel fullerene property on the Si(100)2×1 surface.

    本文言語English
    ページ(範囲)334-339
    ページ数6
    ジャーナルApplied Surface Science
    76-77
    C
    DOI
    出版ステータスPublished - 1994 3 2

    ASJC Scopus subject areas

    • 化学 (全般)
    • 凝縮系物理学
    • 物理学および天文学(全般)
    • 表面および界面
    • 表面、皮膜および薄膜

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