Thermal robustness evaluation of nonvolatile memory using Pt nanogaps

Yasuhisa Naitoh, Hiroshi Suga, Takuya Abe, Kazuki Otsu, Yukiya Umeta, Touru Sumiya, Hisashi Shima, Kazuhito Tsukagoshi, Hiroyuki Akinaga

研究成果: Article査読

3 被引用数 (Scopus)

抄録

We investigated the thermal robustness of a nonvolatile memory using polycrystalline platinum (Pt) nanogap electrodes. The temperature dependences of resistance states were evaluated from room temperature to 773 K. At high temperatures, the resistance of the high-resistance state (HRS) was slightly altered as the temperature changed. This slight alteration could be neglected, and the thermal robustness was improved by etching a SiO2 layer just under the nanogap. This indicated that the thermal alteration was caused by current leakage through the SiO2 layer. The nonvolatile memory employing Pt nanogaps is expected to be potentially useful as a thermally robust memory up to 773 K.

本文言語English
論文番号085202
ジャーナルApplied Physics Express
11
8
DOI
出版ステータスPublished - 2018 8月
外部発表はい

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(全般)

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