Thermal oxidation of outdiffusing SiO with permeating O 2 in a SiO 2 film studied by angle-resolved X-ray photoelectron spectroscopy

Yuji Takakuwa, Mizuhisa Nihei, Nobuo Miyamoto

研究成果: Article査読

55 被引用数 (Scopus)

抄録

During annealing in vacuum and dry O 2 , the amount of suboxide, Θ s , in the 1000 Å SiO 2 films on Si(111) was measured as a function of the annealing time by angle-resolved X-ray photoelectron spectroscopy (ARXPS). From ARXPS spectra of Si 2p taken at two polar angles of 0° (bulk sensitive) and 75° (surface sensitive), it was clarified that during annealing in vacuum, Θ s increases with time underneath the surface more largely than on the surface, but annealing in O 2 atmosphere at 0.5 Torr reduces Θ s on the surface more significantly than underneath the surface. These indicate that SiO molecules outdiffusing from the SiO 2 /Si interface are oxidized by permeating O 2 in the SiO 2 films.

本文言語English
ページ(範囲)141-146
ページ数6
ジャーナルApplied Surface Science
117-118
DOI
出版ステータスPublished - 1997 6 2

ASJC Scopus subject areas

  • 化学 (全般)
  • 凝縮系物理学
  • 物理学および天文学(全般)
  • 表面および界面
  • 表面、皮膜および薄膜

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