The thermal effects in atomic-order nitridation of Si(100) by an electron-cyclotron resonance (ECR) nitrogen plasma were studied by controlling the Si surface temperature. Based on the relationship between the nitridation characteristics and the Si surface temperature in the nitrogen plasma, the thermal effects and the contribution of radicals and ions to atomic-order nitridation were outlined.
|ジャーナル||Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures|
|出版ステータス||Published - 2002 7|
|イベント||Proceedings of the 29th Conference on the Physics and Chemistry of Semiconductor Interfaces - Santa Fe, NM, United States|
継続期間: 2002 1 6 → 2002 1 10
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