Thermal effects in atomic-order nitridation of Si by a nitrogen plasma

Takuya Seino, Daisuke Muto, Takashi Matsuura, Junichi Murota

研究成果: Conference article査読

4 被引用数 (Scopus)

抄録

The thermal effects in atomic-order nitridation of Si(100) by an electron-cyclotron resonance (ECR) nitrogen plasma were studied by controlling the Si surface temperature. Based on the relationship between the nitridation characteristics and the Si surface temperature in the nitrogen plasma, the thermal effects and the contribution of radicals and ions to atomic-order nitridation were outlined.

本文言語English
ページ(範囲)1431-1435
ページ数5
ジャーナルJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
20
4
DOI
出版ステータスPublished - 2002 7
イベントProceedings of the 29th Conference on the Physics and Chemistry of Semiconductor Interfaces - Santa Fe, NM, United States
継続期間: 2002 1 62002 1 10

ASJC Scopus subject areas

  • 凝縮系物理学
  • 電子工学および電気工学

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