Thermal-dependent electronic structure at the interface of C60-adsorbed Si(111)-(7 × 7) surface

Kazuyuki Sakamoto, Daiyu Kondo, Yoshimitsu Ushimi, Akio Kimura, Akito Kakizaki, Shozo Suto

研究成果: Conference article

4 引用 (Scopus)

抜粋

We report here the temperature-dependent measurements of the valence spectra, and the C 1s and the Si 2p core-level spectra of the C60 adsorbed Si(111)-(7 × 7) surface, using photoelectron spectroscopy. At 300 K the valence spectra show the physisorption of most C60 molecules for a one monolayer C60 film. After annealing the sample at 1120 K the molecular orbitals disappear due to the breakdown of the C60 cage. The C 1s and Si 2p core-level spectra obtained at the same temperature indicate the progress of SiC formation at the interface between C60 and the Si(111) surface. After annealing at 1170 K, the formation of SiC islands is confirmed by the binding energies of the peaks observed in the valence and C 1s core-level spectra.

元の言語English
ページ(範囲)248-253
ページ数6
ジャーナルSurface Science
438
発行部数1-3
DOI
出版物ステータスPublished - 1999 9 10
イベントProceedings of the 1998 International Symposium on Surface and Interface: Properties of Different Symmetry Crossing 98 (ISSI PDSC-98) - Tokyo, Jpn
継続期間: 1998 11 191998 11 21

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

フィンガープリント Thermal-dependent electronic structure at the interface of C<sub>60</sub>-adsorbed Si(111)-(7 × 7) surface' の研究トピックを掘り下げます。これらはともに一意のフィンガープリントを構成します。

  • これを引用

    Sakamoto, K., Kondo, D., Ushimi, Y., Kimura, A., Kakizaki, A., & Suto, S. (1999). Thermal-dependent electronic structure at the interface of C60-adsorbed Si(111)-(7 × 7) surface. Surface Science, 438(1-3), 248-253. https://doi.org/10.1016/S0039-6028(99)00577-4