Thermal cycling fatigue in aluminum-alloy thin films on silicon substrate

J. Koike, S. Utsunomiya, K. Maruyama

研究成果: Conference article査読

1 被引用数 (Scopus)

抄録

Thermal cycling was performed in Al-1mo%Si thin films deposited on Si wafers. After a given number of cycling between room temperature and 723 K, residual stress was measured at room temperature. Residual stress was found to increase with increasing the cycling number up to the 4th cycle, followed by further a continuous decrease by further cycling. The initial increase was found to be related to the increase of lattice dislocations and their tangling. The following decrease was caused by crack formation along grain boundaries or by film delamination in some cases.

本文言語English
ページ(範囲)319-324
ページ数6
ジャーナルMaterials Research Society Symposium - Proceedings
505
出版ステータスPublished - 1998
イベントProceedings of the 1997 MRS Fall Meeting - Boston, MA, USA
継続期間: 1997 11月 301997 12月 4

ASJC Scopus subject areas

  • 材料科学(全般)
  • 凝縮系物理学
  • 材料力学
  • 機械工学

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