Thermal conversion mechanism in semi-insulating GaAs

Hideo Ohno, Akio Ushirokawa, Takashi Katoda

研究成果: Article査読

6 被引用数 (Scopus)

抄録

Formation of both p- and n-type thermally converted surface layers in semi-insulating GaAs is explained in terms of outdiffusion of impurities. Carrier concentrations and impurity profiles calculated on the basis of this outdiffusion model are in close agreement with the experimental values which were obtained by Hall measurements on a variety of heat-treated samples. This excellent agreement is further backed by the mass-spectrometric data and gives strong evidence to the adequacy of the model.

本文言語English
ページ(範囲)8226-8228
ページ数3
ジャーナルJournal of Applied Physics
50
12
DOI
出版ステータスPublished - 1979
外部発表はい

ASJC Scopus subject areas

  • 物理学および天文学(全般)

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