Thermal conductivity of 10 nm-diameter silicon nanowires array fabricated by bio-template and neutral beam etching

Akiou Kikuchi; Akifumi Yao; Isamu Mori; Ichiro Yamashita; Takahito Ono; Seiji Samukawa

doi:10.1109/NANO.2016.7751300

Thermal conductivity of 10 nm-diameter silicon nanowires array fabricated by bio-template and neutral beam etching

Akiou Kikuchi, Akifumi Yao, Isamu Mori, Ichiro Yamashita, Takahito Ono, Seiji Samukawa

研究成果: Conference contribution

2 被引用数 (Scopus)

抄録

In this paper, we present the fabrication and thermal conductivity measurements of a 10 nm-diameter Si nanowires (SiNWs) array for thermoelectric (TE) devices applications. The SiNWs were fabricated by bio-template and neutral beam etching techniques. Then, the SiNWs were embedded into spin-on-glass (SOG) for the measurement of the thermal conductivity. The measured thermal conductivities of the SiNWs with lengths of 50 nm and 100 nm were 2.1 ± 0.6 W/mK and 9.5 ± 1.4 W/mK, respectively.

本文言語	English
ホスト出版物のタイトル	16th International Conference on Nanotechnology - IEEE NANO 2016
出版社	Institute of Electrical and Electronics Engineers Inc.
ページ	505-507
ページ数	3
ISBN（電子版）	9781509039142
DOI	https://doi.org/10.1109/NANO.2016.7751300
出版ステータス	Published - 2016 11月 21
イベント	16th IEEE International Conference on Nanotechnology - IEEE NANO 2016 - Sendai, Japan 継続期間: 2016 8月 22 → 2016 8月 25

出版物シリーズ

名前	16th International Conference on Nanotechnology - IEEE NANO 2016

Other

Other	16th IEEE International Conference on Nanotechnology - IEEE NANO 2016
国/地域	Japan
City	Sendai
Period	16/8/22 → 16/8/25

ASJC Scopus subject areas

電子材料、光学材料、および磁性材料
原子分子物理学および光学

文献へのアクセス

10.1109/NANO.2016.7751300

他のファイルとリンク

引用スタイル

Kikuchi, A., Yao, A., Mori, I., Yamashita, I., Ono, T., & Samukawa, S. (2016). Thermal conductivity of 10 nm-diameter silicon nanowires array fabricated by bio-template and neutral beam etching. In 16th International Conference on Nanotechnology - IEEE NANO 2016 (pp. 505-507). [7751300] (16th International Conference on Nanotechnology - IEEE NANO 2016). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/NANO.2016.7751300

Thermal conductivity of 10 nm-diameter silicon nanowires array fabricated by bio-template and neutral beam etching. / Kikuchi, Akiou; Yao, Akifumi; Mori, Isamu その他.

16th International Conference on Nanotechnology - IEEE NANO 2016. Institute of Electrical and Electronics Engineers Inc., 2016. p. 505-507 7751300 (16th International Conference on Nanotechnology - IEEE NANO 2016).

研究成果: Conference contribution

Kikuchi, A, Yao, A, Mori, I, Yamashita, I, Ono, T & Samukawa, S 2016, Thermal conductivity of 10 nm-diameter silicon nanowires array fabricated by bio-template and neutral beam etching. in 16th International Conference on Nanotechnology - IEEE NANO 2016., 7751300, 16th International Conference on Nanotechnology - IEEE NANO 2016, Institute of Electrical and Electronics Engineers Inc., pp. 505-507, 16th IEEE International Conference on Nanotechnology - IEEE NANO 2016, Sendai, Japan, 16/8/22. https://doi.org/10.1109/NANO.2016.7751300

Kikuchi A, Yao A, Mori I, Yamashita I, Ono T , Samukawa S. Thermal conductivity of 10 nm-diameter silicon nanowires array fabricated by bio-template and neutral beam etching. In 16th International Conference on Nanotechnology - IEEE NANO 2016. Institute of Electrical and Electronics Engineers Inc. 2016. p. 505-507. 7751300. (16th International Conference on Nanotechnology - IEEE NANO 2016). doi: 10.1109/NANO.2016.7751300

Kikuchi, Akiou ; Yao, Akifumi ; Mori, Isamu その他. / Thermal conductivity of 10 nm-diameter silicon nanowires array fabricated by bio-template and neutral beam etching. 16th International Conference on Nanotechnology - IEEE NANO 2016. Institute of Electrical and Electronics Engineers Inc., 2016. pp. 505-507 (16th International Conference on Nanotechnology - IEEE NANO 2016).

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abstract = "In this paper, we present the fabrication and thermal conductivity measurements of a 10 nm-diameter Si nanowires (SiNWs) array for thermoelectric (TE) devices applications. The SiNWs were fabricated by bio-template and neutral beam etching techniques. Then, the SiNWs were embedded into spin-on-glass (SOG) for the measurement of the thermal conductivity. The measured thermal conductivities of the SiNWs with lengths of 50 nm and 100 nm were 2.1 ± 0.6 W/mK and 9.5 ± 1.4 W/mK, respectively.",

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AU - Ono, Takahito

AU - Samukawa, Seiji

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N2 - In this paper, we present the fabrication and thermal conductivity measurements of a 10 nm-diameter Si nanowires (SiNWs) array for thermoelectric (TE) devices applications. The SiNWs were fabricated by bio-template and neutral beam etching techniques. Then, the SiNWs were embedded into spin-on-glass (SOG) for the measurement of the thermal conductivity. The measured thermal conductivities of the SiNWs with lengths of 50 nm and 100 nm were 2.1 ± 0.6 W/mK and 9.5 ± 1.4 W/mK, respectively.

AB - In this paper, we present the fabrication and thermal conductivity measurements of a 10 nm-diameter Si nanowires (SiNWs) array for thermoelectric (TE) devices applications. The SiNWs were fabricated by bio-template and neutral beam etching techniques. Then, the SiNWs were embedded into spin-on-glass (SOG) for the measurement of the thermal conductivity. The measured thermal conductivities of the SiNWs with lengths of 50 nm and 100 nm were 2.1 ± 0.6 W/mK and 9.5 ± 1.4 W/mK, respectively.

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Thermal conductivity of 10 nm-diameter silicon nanowires array fabricated by bio-template and neutral beam etching

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