Thermal change of unstable stacking faults in β-SiC

Naoto Shirahata, Kazunori Kijima, Xiuliang Ma, Yuichi Ikuhara

研究成果: Article査読

3 被引用数 (Scopus)

抄録

The thermal change of unstable stacking faults (USFs) in ultrafine and highly pure β-SiC powder synthesized by the plasma chemical vapor deposition (plasma-CVD) method was studied by high-resolution transmission electron microscopy (HR-TEM). The number of USFs, which were frequently observed in as-synthesized powder, decreased at elevated temperatures in an Ar atmosphere. In contrast, the number of general stacking faults (GSFs) increased with decreasing number of USFs. Moreover, a type of stacking fault that was geometrically more unstable than USF was observed in the specimen after heat treatment. In the present study, the annihilation process of USFs observed in the specimen before heat treatment is discussed.

本文言語English
ページ(範囲)3969-3974
ページ数6
ジャーナルJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
40
6 A
DOI
出版ステータスPublished - 2001 6月
外部発表はい

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(全般)

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