Thermal and electrical properties of Czochralski grown GeSi single crystals

Ichiro Yonenaga, Takaya Akashi, Takashi Goto

研究成果: Conference article査読

1 被引用数 (Scopus)

抄録

Single crystals of Ge1-xSix alloys in the composition range 0 < x < 1 non-doped and doped with boron, gallium, and phosphorus as an impurity were grown by the Czochralski method. The measurements of the thermal conductivity (κ), electrical conductivity (σ), and Seebeck coefficient (α) of the grown crystals were performed in the temperature range 300-1000 K. The thermal conductivity κ shows a minimum (κ ∼ 3.5 W/K·m) around the Si content x = 0.5 - 0.7, which can be explained by the phonon scattering due to a distortion of the crystal lattice. The Seebeck coefficient α was 300 - 400 μV/K at 600°C in the impurity-doped GeSi alloys. An |α| vs 1n (σ) plot of highly impurity-doped GeSi alloys obeys a linear relation. The slope of the straight line is 1.2 k/e, indicating the corporation of the charged impurity into the alloy scattering mechanism.

本文言語English
ページ(範囲)169-174
ページ数6
ジャーナルMaterials Research Society Symposium - Proceedings
691
出版ステータスPublished - 2002
イベントThermoelectric Materials 2001-Research and Applications - Boston, MA, United States
継続期間: 2001 11月 262001 11月 29

ASJC Scopus subject areas

  • 材料科学(全般)
  • 凝縮系物理学
  • 材料力学
  • 機械工学

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