TY - JOUR
T1 - Theoretical study on the stability of ferromagnetism and resistivity of dilute magnetic semiconductors at finite temperature
AU - Sakuma, Akimasa
N1 - Funding Information:
This work was supported by Scientific Research of the Priority Areas Research Program “Panoscopic Assembling and High Ordered Functions for Rare Earth Materials” of the Ministry of Education, Culture, Sports, Science and Technology of Japan, Contract No. 16080203.
PY - 2006
Y1 - 2006
N2 - Based on the s-d model, where the concentration of the d sites is low enough, magnetism and transport properties are investigated for the dilute magnetic semiconductors. In case in which the Fermi level lies near the upper edge of the s band, ferromagnetism is realized when the site energy of the d state (Ed) is located around the edge of the s band. In this case, down spin states of the d band are expelled out of the s band, resulting in a formation of the gap in the down-spin band. This leads to a half-metallic character accompanied by the resonance enhancement of the ferromagnetic interaction. The resistivity has a residual value at T=0 as the effects both of random distribution of the localized spins and energy difference between the s and d states.
AB - Based on the s-d model, where the concentration of the d sites is low enough, magnetism and transport properties are investigated for the dilute magnetic semiconductors. In case in which the Fermi level lies near the upper edge of the s band, ferromagnetism is realized when the site energy of the d state (Ed) is located around the edge of the s band. In this case, down spin states of the d band are expelled out of the s band, resulting in a formation of the gap in the down-spin band. This leads to a half-metallic character accompanied by the resonance enhancement of the ferromagnetic interaction. The resistivity has a residual value at T=0 as the effects both of random distribution of the localized spins and energy difference between the s and d states.
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U2 - 10.1063/1.2162343
DO - 10.1063/1.2162343
M3 - Article
AN - SCOPUS:33646730271
VL - 99
JO - Journal of Applied Physics
JF - Journal of Applied Physics
SN - 0021-8979
IS - 8
M1 - 08D509
ER -