Theoretical study of excess Si emitted from Si-oxide/Si interfaces

Hiroyuki Kageshima, Masahi Uematsu, Kazuto Akagi, Shinji Tsuneyuki, Toru Akiyama, Kenji Shiraishi

研究成果: Article

15 引用 (Scopus)

抜粋

The excess Si emitted from the Si-oxide/Si interface is studied using the first-principles calculations. It is shown that the excess Si can have many (meta-) stable positions around the interface. In addition, some positions in the oxide do not have any dangling bonds or floating bonds in contrast to those in the bulk crystalline Si. The results indicate that the emitted Si can be located in the oxide layer but they do not necessarily cause charge traps in the oxide. The emitted Si atoms are thought to just be oxidized and absorbed into the oxide while a portion of them cause the E′ centers, the P b centers or charge traps.

元の言語English
ページ(範囲)8223-8226
ページ数4
ジャーナルJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
43
発行部数12
DOI
出版物ステータスPublished - 2004 12 1
外部発表Yes

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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