Theoretical insights into the minority carrier lifetime of doped Si - A computational study

K. Iyakutti, R. Lavanya, R. Rajeswarapalanichamy, E. Mathan Kumar, Y. Kawazoe

研究成果: Article査読

1 被引用数 (Scopus)

抄録

Using density functional theory, we have analyzed the ways and means of improving the minority carrier lifetime (MCL) by calculating the band structure dependent quantities contributing to the MCL. We have computationally modeled silicon doped with different elements like B, C, N, O, P, Ti, Fe, Ga, Ge, As, In, Sn, Sb, and Pt and looked at the effect of doping on MCL. In co-doping, the systems Si-B-Ga, Si-B-Ge, Si-B-2Ge, Si-B-Pt, Si-Ga-Ge, Si-Ga-2Ge, and Si-Ga-Pt are investigated. From our calculation, it is found that by doping and co-doping of Si with suitable elements having "s" and "p" electrons, there is a decrease in the recombination activity. The predicted effective minority carrier lifetime indicates the possibility of significant improvements. Based on the above studies, it is now maybe possible, with suitable choice of dopant and co-dopant material, to arrive at part of a standard production process for solar grade Si material.

本文言語English
論文番号161420
ジャーナルJournal of Applied Physics
123
16
DOI
出版ステータスPublished - 2018 4 28

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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