Theoretical analysis of vacancy transport combined with electromigration and stress induced voiding

Takenao Nemoto, Toshimitsu Yokobori, Tsutomu Murakawa

    研究成果: Conference contribution

    1 被引用数 (Scopus)

    抄録

    Electromigration (EM) and stress-induced voiding have become significant in recent LSI interconnections due to the increase in current density and residual stress [1-3]. Many works have been carried out to clarify the relationship between EM and residual stress [4-6]. The present authors have reported the numerical analysis of vacancy transport based upon the mass balance equation [7]. This paper concludes that the behavior of vacancy transport by EM is influenced by residual stress. In this paper, an equation for vacancy transport is proposed to include the effect of residual stress. A computer-aided simulation and an in-situ observation test are conducted to discuss the quantitative relationship between current density and residual stress. [Keywords:.

    本文言語English
    ホスト出版物のタイトル2007 IEEE International Reliability Physics Symposium Proceedings, 45th Annual
    ページ634-635
    ページ数2
    DOI
    出版ステータスPublished - 2007 9 25
    イベント45th Annual IEEE International Reliability Physics Symposium 2007, IRPS - Phoenix, AZ, United States
    継続期間: 2007 4 152007 4 19

    出版物シリーズ

    名前Annual Proceedings - Reliability Physics (Symposium)
    ISSN(印刷版)0099-9512

    Other

    Other45th Annual IEEE International Reliability Physics Symposium 2007, IRPS
    CountryUnited States
    CityPhoenix, AZ
    Period07/4/1507/4/19

    ASJC Scopus subject areas

    • Electrical and Electronic Engineering
    • Safety, Risk, Reliability and Quality

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