Theoretical Advances in the Electronic and Atomic Structures of Silicon Nanotubes and Nanowires

Abhishek Kumar Singh, Vijay Kumar, Yoshiyuki Kawazoe

研究成果: Chapter

2 被引用数 (Scopus)

抄録

Nanotubular and nanowire structures of silicon are currently of great interest for miniature devices. Recently, using cluster assembly approach, nanotubular forms of silicon have been shown to be stabilized by encapsulation of metal atoms. This chapter reviews these developments and discusses the stability of such nanostructures and their electronic properties including metallic, semiconducting, and magnetic behaviors. Hydrogenated and oxygenated structures of silicon can also be made in tubular forms. These could be among the thinnest semiconducting nanostructures of silicon. Thicker quasi-one-dimensional structures of silicon have been grown in the form of nanowires which could be metallic or semiconducting. This chapter discusses the surface reconstruction in such nanowires and their electronic properties. Further effects of p- or n-type doping as well as hydrogen defects on the atomic and electronic structures of hydrogenated Si nanowires are presented. The metallic, semiconducting, and optical properties of silicon in such nanostructures could make it possible to develop novel silicon-based nanodevices.

本文言語English
ホスト出版物のタイトルNanosilicon
出版社Elsevier Ltd
ページ217-257
ページ数41
ISBN(印刷版)9780080445281
DOI
出版ステータスPublished - 2008

ASJC Scopus subject areas

  • 工学(全般)

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