The use of diethylselenide as a less-hazardous source in CuInGaSe2 photoabsorbing alloy formation by selenization of metal precursors premixed with Se

M. Sugiyama, F. B. Dejene, A. Kinoshita, M. Fukaya, Y. Maru, T. Nakagawa, H. Nakanishi, V. Alberts, S. F. Chichibu

研究成果: Article査読

23 被引用数 (Scopus)

抄録

Selenization growth of phase-separation-free polycrystalline CuIn1-xGaxSe2(0 ≤ x ≤ 0.29) films was demonstrated using a less-hazardous organometallic Se source, diethylselenide [(C2H5)2Se: DESe], and stacked structure of Se-premixed Cu-In-Ga metals called 'precursors'. Distinct from the case of using Se vapor or H2Se gas, single-phase CuInGaSe2 films were obtained without thermal annealing using a combination of DESe and Se-premixed precursors. Photoluminescence spectra of the films at 77 K were dominated by the defect-related donor-acceptor pair and free electron to acceptor recombination emissions, which are particular to the CuInGaSe2 films exhibiting high-conversion efficiency.

本文言語English
ページ(範囲)214-217
ページ数4
ジャーナルJournal of Crystal Growth
294
2
DOI
出版ステータスPublished - 2006 9 4
外部発表はい

ASJC Scopus subject areas

  • 凝縮系物理学
  • 無機化学
  • 材料化学

フィンガープリント

「The use of diethylselenide as a less-hazardous source in CuInGaSe<sub>2</sub> photoabsorbing alloy formation by selenization of metal precursors premixed with Se」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル