TY - JOUR
T1 - The selective area deposition of diamond films
AU - Liu, Hongwu
AU - Gao, Chunxiao
AU - Zou, Guangtian
AU - Li, Xun
AU - Wang, Chengxin
AU - Wen, Chao
PY - 2000
Y1 - 2000
N2 - By selectively seeding, polycrystalline diamond films have been patterned on mirror-polished Si substrate using hot-filament chemical vapor deposition. Results show high selectivity and high quality in patterned diamond films deposited at 0.05% CH4/H2 concentration and at the growth rate of 2.6 μm/h. The selective area deposition (SAD) method is easy to be applied to a large and a different substrate.
AB - By selectively seeding, polycrystalline diamond films have been patterned on mirror-polished Si substrate using hot-filament chemical vapor deposition. Results show high selectivity and high quality in patterned diamond films deposited at 0.05% CH4/H2 concentration and at the growth rate of 2.6 μm/h. The selective area deposition (SAD) method is easy to be applied to a large and a different substrate.
KW - High selectivity
KW - Hot-filament chemical vapor deposition
KW - Polycrystalline diamond films
KW - Selective area deposition
KW - Selectively seeding
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U2 - 10.1143/jjap.39.1323
DO - 10.1143/jjap.39.1323
M3 - Article
AN - SCOPUS:0033742363
VL - 39
SP - 1323
EP - 1324
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 3 A
ER -