By selectively seeding, polycrystalline diamond films have been patterned on mirror-polished Si substrate using hot-filament chemical vapor deposition. Results show high selectivity and high quality in patterned diamond films deposited at 0.05% CH4/H2 concentration and at the growth rate of 2.6 μm/h. The selective area deposition (SAD) method is easy to be applied to a large and a different substrate.
|ジャーナル||Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers|
|出版ステータス||Published - 2000|
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