The role of diffusion barrier temperature in gallium arsenide crystals grown by the gradient freeze method

Katsushi Fujii, Fumio Orito, Hisanori Fujita, Tadashige Sato

研究成果: Article査読

3 被引用数 (Scopus)

抄録

A gallium arsenide crystal grown by the gradient freeze method is contaminated with silicon and oxygen, from reactions between gallium and quartz. The oxygen concentration increases with the diffusion barrier temperature. This is explained by a thermodynamic analysis of the Ga-As-Si-O system. The effect of reduced oxygen concentration on the electrical properties of GaAs crystals is also discussed.

本文言語English
ページ(範囲)255-266
ページ数12
ジャーナルJournal of Crystal Growth
121
3
DOI
出版ステータスPublished - 1992 7

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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