The reason why thin-film silicon grows layer by layer in plasma-enhanced chemical vapor deposition

Takuya Kuwahara, Hiroshi Ito, Kentaro Kawaguchi, Yuji Higuchi, Nobuki Ozawa, Momoji Kubo

研究成果: Article査読

11 被引用数 (Scopus)

抄録

Thin-film Si grows layer by layer on Si(001)-(2 × 1):H in plasma-enhanced chemical vapor deposition. Here we investigate the reason why this occurs by using quantum chemical molecular dynamics and density functional theory calculations. We propose a dangling bond (DB) diffusion model as an alternative to the SiH 3 diffusion model, which is in conflict with first-principles calculation results and does not match the experimental evidence. In our model, DBs diffuse rapidly along an upper layer consisting of Si-H 3 sites, and then migrate from the upper layer to a lower layer consisting of Si-H sites. The subsequently incident SiH 3 radical is then adsorbed onto the DB in the lower layer, producing two-dimensional growth. We find that DB diffusion appears analogous to H diffusion and can explain the reason why the layer-by-layer growth occurs.

本文言語English
論文番号9052
ジャーナルScientific reports
5
DOI
出版ステータスPublished - 2015 3 16

ASJC Scopus subject areas

  • 一般

フィンガープリント

「The reason why thin-film silicon grows layer by layer in plasma-enhanced chemical vapor deposition」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル