The origin of field-induced electron emission from N-doped CVD diamond characterized by combined XPS/UPS/FES system

Hisato Yamaguchi, Yuki Kudo, Tomoaki Masuzawa, Yoshifumi Shiraki, Ichitaro Saito, Masato Kudo, Takatoshi Yamada, Yuji Takakuwa, Ken Okano

研究成果: Conference contribution

抄録

The origin of field-emitted electrons for hydrogen-terminated natural IIb diamond was investigated as a reference to define the origin of field-emitted electrons from lightly nitrogen (N)-doped chemical vapor deposition (CVD) diamond. Using our combined X-ray photoelectron spectroscopy / ultraviolet photoelectron spectroscopy / field emission spectroscopy (XPS/UPS/FES) system, we determined the origin of field-emitted electrons for the natural diamond. The energy level of field-emitted electrons was at valence band maximum (VBM) and the origin of field-emitted electrons was independent of applied voltages. The results suggested the observed shift for FES peak of lightly N-doped CVD diamond is most likely due to the resistance of the diamond bulk. The FES Peak Energy - Emission Current characteristics was best fitted to straight lines, and the resistance of the diamond was consistent with the resistance obtained from the slope. In addition, an attempt was made to define the origin of field-induced electron emission for heavily N-doped CVD diamond. The result suggested a possibility of conduction band minimum (CBM) as an origin of emitted electrons.

本文言語English
ホスト出版物のタイトルMaterials Research Society Symposium Proceedings
ホスト出版物のサブタイトルDiamond Electronics - Fundamentals to Applications II
ページ135-141
ページ数7
出版ステータスPublished - 2008
イベントDiamond Electronics - Fundamentals to Applications II - Boston, MA, United States
継続期間: 2007 11 262007 11 30

出版物シリーズ

名前Materials Research Society Symposium Proceedings
1039
ISSN(印刷版)0272-9172

Other

OtherDiamond Electronics - Fundamentals to Applications II
国/地域United States
CityBoston, MA
Period07/11/2607/11/30

ASJC Scopus subject areas

  • 材料科学(全般)
  • 凝縮系物理学
  • 材料力学
  • 機械工学

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