TY - JOUR
T1 - The magnetoresistance of Fe/MgO/GaAs/MgO/Fe junctions
AU - Mitsuhash, Fuminori
AU - Tezuka, Nobuki
AU - Sugimoto, Satoshi
N1 - Copyright:
Copyright 2012 Elsevier B.V., All rights reserved.
PY - 2009/4
Y1 - 2009/4
N2 - We investigated the structure and magnetoresistance effect for the Fe/MgO/GaAs/MgO/Fe junctions. The junctions were deposited on MgO(001) single crystal substrate by Molecular Beam Epitaxy. RHEED patterns and XRD pole profiles reveal that bottom electrodes, Fe, and inter layers, n-GaAs, grow epitaxially. While RHEED patterns reveal that upper electrodes, Fe, grow in a polycrystal form. The junctions exhibit magnetoresistance ratio of 3.2% at room temperature. The magnetoresistance curves correspond to the magnetization alignment between the bottom and the upper Fe electrodes. These results indicate that the magnetoresistance effect originates from spin injection from Fe to GaAs through MgO barriers.
AB - We investigated the structure and magnetoresistance effect for the Fe/MgO/GaAs/MgO/Fe junctions. The junctions were deposited on MgO(001) single crystal substrate by Molecular Beam Epitaxy. RHEED patterns and XRD pole profiles reveal that bottom electrodes, Fe, and inter layers, n-GaAs, grow epitaxially. While RHEED patterns reveal that upper electrodes, Fe, grow in a polycrystal form. The junctions exhibit magnetoresistance ratio of 3.2% at room temperature. The magnetoresistance curves correspond to the magnetization alignment between the bottom and the upper Fe electrodes. These results indicate that the magnetoresistance effect originates from spin injection from Fe to GaAs through MgO barriers.
KW - Spin injection
KW - Spintronics
KW - Tunnel magnetoresistance
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U2 - 10.2320/jinstmet.73.251
DO - 10.2320/jinstmet.73.251
M3 - Article
AN - SCOPUS:66449108280
VL - 73
SP - 251
EP - 254
JO - Nippon Kinzoku Gakkaishi/Journal of the Japan Institute of Metals
JF - Nippon Kinzoku Gakkaishi/Journal of the Japan Institute of Metals
SN - 0021-4876
IS - 4
ER -