The magnetoresistance of Fe/MgO/GaAs/MgO/Fe junctions

Fuminori Mitsuhash, Nobuki Tezuka, Satoshi Sugimoto

研究成果: Article査読

1 被引用数 (Scopus)

抄録

We investigated the structure and magnetoresistance effect for the Fe/MgO/GaAs/MgO/Fe junctions. The junctions were deposited on MgO(001) single crystal substrate by Molecular Beam Epitaxy. RHEED patterns and XRD pole profiles reveal that bottom electrodes, Fe, and inter layers, n-GaAs, grow epitaxially. While RHEED patterns reveal that upper electrodes, Fe, grow in a polycrystal form. The junctions exhibit magnetoresistance ratio of 3.2% at room temperature. The magnetoresistance curves correspond to the magnetization alignment between the bottom and the upper Fe electrodes. These results indicate that the magnetoresistance effect originates from spin injection from Fe to GaAs through MgO barriers.

本文言語English
ページ(範囲)251-254
ページ数4
ジャーナルNippon Kinzoku Gakkaishi/Journal of the Japan Institute of Metals
73
4
DOI
出版ステータスPublished - 2009 4

ASJC Scopus subject areas

  • 凝縮系物理学
  • 材料力学
  • 金属および合金
  • 材料化学

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