TY - JOUR
T1 - The impact of Ge codoping on grown-in O precipitates in Ga-doped Czochralski-silicon
AU - Arivanandhan, Mukannan
AU - Gotoh, Raira
AU - Fujiwara, Kozo
AU - Ozawa, Tetsuo
AU - Hayakawa, Yasuhiro
AU - Uda, Satoshi
N1 - Funding Information:
This work was financially supported by a Grant-in-Aid for Young scientist B (No. 22760005 ) from the Ministry of Education, Culture, Sports, Science and Technology of Japan .
PY - 2011/4/15
Y1 - 2011/4/15
N2 - The intensity of the infrared absorption band at 1107 cm-1, related to interstitial oxygen (Oi) concentration, decreased as the Ge concentration increased in Ga and Ge codoped CZSi crystals. In contrast, the number of precipitates observed on the etched surfaces of CZSi wafers increased as the Ge concentration increased. From an energy dispersive X-ray (EDX) analysis, O was observed to be one of the major components of the precipitates. Moreover, Ge was found as one of the components in the precipitate observed on the heavily Ge (>1×1018 cm-3) codoped CZSi wafers. These results suggest that the grown-in O precipitates increase as the Oi concentration decreases when the Ge concentration increases in the Si crystal. The Ge-vacancy (V) complex in the Si lattice probably acted as a heterogeneous nucleation center and may enhanced the grown-in O precipitates thereby reducing the dissolved Oi concentration in the Si lattice.
AB - The intensity of the infrared absorption band at 1107 cm-1, related to interstitial oxygen (Oi) concentration, decreased as the Ge concentration increased in Ga and Ge codoped CZSi crystals. In contrast, the number of precipitates observed on the etched surfaces of CZSi wafers increased as the Ge concentration increased. From an energy dispersive X-ray (EDX) analysis, O was observed to be one of the major components of the precipitates. Moreover, Ge was found as one of the components in the precipitate observed on the heavily Ge (>1×1018 cm-3) codoped CZSi wafers. These results suggest that the grown-in O precipitates increase as the Oi concentration decreases when the Ge concentration increases in the Si crystal. The Ge-vacancy (V) complex in the Si lattice probably acted as a heterogeneous nucleation center and may enhanced the grown-in O precipitates thereby reducing the dissolved Oi concentration in the Si lattice.
KW - A1. Codoping
KW - A1. Point defects
KW - A2. Czochralski method
KW - B2. Semiconductor silicon
UR - http://www.scopus.com/inward/record.url?scp=79953236491&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=79953236491&partnerID=8YFLogxK
U2 - 10.1016/j.jcrysgro.2011.02.028
DO - 10.1016/j.jcrysgro.2011.02.028
M3 - Article
AN - SCOPUS:79953236491
VL - 321
SP - 24
EP - 28
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
SN - 0022-0248
IS - 1
ER -