The impact of an intermediate temperature buffer on the growth of GaN on an AlN template by hydride vapor phase epitaxy

Youngji Cho, Jun Seok Ha, Mina Jung, Hyun Jae Lee, Seunghwan Park, Jinsub Park, Katsushi Fujii, Ryuichi Toba, Samnyung Yi, Gyung Suk Kil, Jiho Chang, Takafumi Yao

研究成果: Article査読

3 被引用数 (Scopus)

抄録

The present study focused on the effect of an intermediate-temperature (IT; ∼900 °C) buffer layer on GaN films, grown on an AlN/sapphire template by hydride vapor phase epitaxy (HVPE). In this paper, the surface morphology, structural quality, residual strain, and luminescence properties are discussed in terms of the effect of the buffer layer. The GaN film with an IT-buffer revealed a relatively lower screw-dislocation density (3.29×107 cm-2) and a higher edge-dislocation density (8.157×109 cm-2) than the GaN film without an IT-buffer. Moreover, the IT-buffer reduced the residual strain and improved the luminescence. We found that the IT-buffer played an important role in the reduction of residual strain and screw-dislocation density in the overgrown layer through the generation of edge-type dislocations and the spontaneous treatment of the threading dislocation by interrupting the growth and increasing the temperature.

本文言語English
ページ(範囲)1693-1696
ページ数4
ジャーナルJournal of Crystal Growth
312
10
DOI
出版ステータスPublished - 2010 5月 1

ASJC Scopus subject areas

  • 凝縮系物理学
  • 無機化学
  • 材料化学

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