The high temperature thermoelectric properties of Te-doped TiCoSb Half-Heusler compounds

Ting Wu, Wan Jiang, Lidong Chen, Xiaoya Li, Jianfeng Zhang

    研究成果: Article査読

    抄録

    Half-Heusler compounds of Te-doped TiCoSb were prepared by solid-state reaction. XRD analysis confirmed that all the sample were crystallized in the single-phase. Their thermoelectric properties were measured in the temperature rang of 300-850 K. The un-doped TiCoSb compound shows n-type conduction and possesses high Seebeck coefficient at high temperatures. Te doping on Sb site results in a significant reduction of the electrical resistivity and Seebeck coefficient. The thermal conductivity also decreases little with increasing Te content. The maximum value of ZT is nearly 5 times larger than the un-doped TiCoSb compounds.

    本文言語English
    ページ(範囲)412-414
    ページ数3
    ジャーナルXiyou Jinshu Cailiao Yu Gongcheng/Rare Metal Materials and Engineering
    36
    SUPPL. 2
    出版ステータスPublished - 2007 8月 1

    ASJC Scopus subject areas

    • 電子材料、光学材料、および磁性材料
    • 金属および合金
    • 電子工学および電気工学
    • 材料化学

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