The growth mechanism of SiC film on a Si(111)-(7×7) surface by C60 precursor studied by photoelectron spectroscopy

Kazuyuki Sakamoto, Daiyu Kondo, Kenichi Ohno, Akio Kimura, Akito Kakizaki, Shozo Suto, Wakio Uchida, Atsuo Kasuya

研究成果: Article査読

2 被引用数 (Scopus)

抄録

We have investigated the growth mechanism of SiC film by the thermal reaction of C60 molecules adsorbed on a Si(111)-(7×7) surface using photoelectron spectroscopy. The growth of SiC film, performed by repeating the sample annealing at 1370 K following the adsorption of C60 molecules, is confirmed by the profile of the valence spectrum. The bonding nature between C60 molecules and the SiC surface is considered to have a covalent character at 300 and 670 K, and both covalent and ionic characters at 870 K by the thermal-dependent valence and C 1s core level spectra of a 1 monolayer C60 film adsorbed on SiC. Furthermore, we determined that the breaking of the C60 cage and the formation of SiC occurred at 1070 K, i.e. at a temperature 100 K lower than that on a Si(111) surface.

本文言語English
ページ(範囲)4536-4539
ページ数4
ジャーナルJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
39
7 B
DOI
出版ステータスPublished - 2000

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(全般)

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