The exchange-coupled field in NiO/Ni double layer on silica substrates

Nobutaka Ihara, Shingo Akao, Satoru Akimoto, Shin Narushima, Toshiaki Saito, Kiminari Shinagawa, Tachiro Tsushima

研究成果: Article査読

抄録

The effect of silica substrate on the exchange-coupled field Hex in NiO/Ni films was examined. Ni film was vacuum-evaporated on a silica substrate, and then it was oxidized thermally in oxygen to form a NiO/Ni double-layered film. In comparison with our previous results of NiO/Ni film on MgO, Hex for silica and MgO substrate showed almost the same behavior. When the substrate temperature was varied during the evaporation of Ni, it was found that the crystal orientation of Ni in the NiO/Ni double-layered film changes, and Hex is almost independent of the Ni crystal orientation.

本文言語English
ページ(範囲)4782-4786
ページ数5
ジャーナルJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
37
9 A
DOI
出版ステータスPublished - 1998 9月
外部発表はい

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(全般)

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