The effect of silica substrate on the exchange-coupled field Hex in NiO/Ni films was examined. Ni film was vacuum-evaporated on a silica substrate, and then it was oxidized thermally in oxygen to form a NiO/Ni double-layered film. In comparison with our previous results of NiO/Ni film on MgO, Hex for silica and MgO substrate showed almost the same behavior. When the substrate temperature was varied during the evaporation of Ni, it was found that the crystal orientation of Ni in the NiO/Ni double-layered film changes, and Hex is almost independent of the Ni crystal orientation.
|ジャーナル||Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers|
|出版ステータス||Published - 1998 9月|
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