抄録
We have investigated the effect of upper barrier layer growth on self-assembled CdSe quantum dots (QDs) by transmission electron microscope (TEM) and atomic force microscope (AFM). The AFM image of CdSe surfaces reveals a lot of isolated CdSe dots and non-uniform two-dimensional CdSe islands. The alloying layer is observed by cross-sectional TEM image. This alloying is explained by the diffusion of CdSe when ZnSe cap layer is grown on CdSe surfaces. Photoluminescence excitation spectra of self-assembled CdSe QDs reveal the existence of a non-uniform CdZnSe quantum well and CdSe QDs with CdZnSe alloy region. This result is in good agreement with the results of TEM and AFM observations.
| 本文言語 | English |
|---|---|
| ページ（範囲） | 457-461 |
| ページ数 | 5 |
| ジャーナル | Physica Status Solidi (B) Basic Research |
| 巻 | 229 |
| 号 | 1 |
| DOI | |
| 出版ステータス | Published - 2002 8月 29 |
| 外部発表 | はい |
ASJC Scopus subject areas
- 電子材料、光学材料、および磁性材料
- 凝縮系物理学