The effect of isotropic and anisotropic scattering in drain region of ballistic channel diode

A. Abudukelimu, K. Kakushima, P. Ahmet, M. Genic, K. Tsutsui, A. Nishiyama, N. Sugii, K. Natori, T. Hattori, H. Iwai

研究成果: Conference contribution

5 被引用数 (Scopus)

抄録

The effect of isotropic and anisotropic scattering within the drain region of diode with ballistic channel is investigated using the semiclassical Monte Carlo simulation, and the results are discussed. The results show that the isotropic scattering can severely degrade the steady-state current, the electrons mean velocity, and increase the electrons concentration in channel because some hot electrons can back into the channel from drain, and even return to the source. On the contrary, anisotropic scattering can suppresses the backward flow of hot electrons. We conclude that the isotropic scattering in the drain region seriously influences the carrier transport relative to anisotropic scattering.

本文言語English
ホスト出版物のタイトルICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings
ページ1247-1249
ページ数3
DOI
出版ステータスPublished - 2010
外部発表はい
イベント2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology - Shanghai, China
継続期間: 2010 11 12010 11 4

出版物シリーズ

名前ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings

Other

Other2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology
国/地域China
CityShanghai
Period10/11/110/11/4

ASJC Scopus subject areas

  • ハードウェアとアーキテクチャ
  • 電子工学および電気工学

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