The design concept for high-temperature photo-electronic devices using SrTiO3

F. Horikiri, K. Sato, K. Yashiro, T. Kawada, J. Mizusaki

研究成果: Conference contribution

抄録

Quantum electronic discussion was made on metal/SrTiO3 hetero-structure to obtain the design concept for high-temperature photo-electronic devices using SrTiO3. The current density ratios were calculated between tunneling and thermionic emission component across the hetero-interface, which indicates how much dopant concentration is required for ohmic or Schottky contact. WKB approximation and Gamow transmission coefficient were used in calculation of the tunneling coefficient. The calculated results show good agreement with experimental results. The possibility of high-temperature photo-electronic devices using SrTiO3 was shown both in theoretical and experimental approach.

本文言語English
ホスト出版物のタイトルECS Transactions - Solid State Ionic Devices 6 - Nanoionics - 214th ECS Meeting
ページ459-469
ページ数11
51
DOI
出版ステータスPublished - 2008
イベントSolid State Ionic Devices 6 - Nanoionics - 214th ECS Meeting - Honolulu, HI, United States
継続期間: 2008 10 122008 10 17

出版物シリーズ

名前ECS Transactions
番号51
16
ISSN(印刷版)1938-5862
ISSN(電子版)1938-6737

Other

OtherSolid State Ionic Devices 6 - Nanoionics - 214th ECS Meeting
CountryUnited States
CityHonolulu, HI
Period08/10/1208/10/17

ASJC Scopus subject areas

  • Engineering(all)

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