The critical growth velocity for planar-to-faceted interfaces transformation in SiGe crystals

Xinbo Yang, K. Fujiwara, N. V. Abrosimov, R. Gotoh, J. Nozawa, H. Koizumi, A. Kwasniewski, S. Uda

研究成果: Article

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Crystal-melt interface morphological transformation of differently oriented SiGe crystals with different Ge concentrations was observed, and the effect of Ge concentration on critical growth velocity (V c) for the interface morphological transformation was investigated. A planar-to-faceted morphological transformation for the 〈110〉, 〈112〉, and 〈100〉 interfaces was observed. V c for planar-to-faceted transformation of the 〈110〉, 〈112〉, and 〈100〉 interfaces decreases nonlinearly with increasing Ge concentration. SiGe faceted interfaces can be attributed to the fact that the perturbation induced in a planar interface was amplified when the constitutional undercooled zone was formed at high growth velocities.

元の言語English
記事番号141601
ジャーナルApplied Physics Letters
100
発行部数14
DOI
出版物ステータスPublished - 2012 4 2

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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