TY - JOUR
T1 - The compositional and optical characterizations of InGaAsN alloy semiconductor grown by MOVPE
AU - Sanorpim, Sakuntam
AU - Nakajima, Fumihiro
AU - Katayama, Ryuji
AU - Onabe, Kentaro
AU - Shiraki, Yashihiro
PY - 2002/12/1
Y1 - 2002/12/1
N2 - We report on the compositional and optical investigation of InGaAs(N) alloy films grown on GaAs (001) substrates by low-pressure (60 Torr) metalorganic vapor phase epitaxy (MOVPE). The alloy films with the room-temperature photoreflactance (PR) signal (Eo transition) wavelength range of 0.98-1.36 μm have been grown. The variation in PL characteristics of the InGaAs(N) alloy films has been investigated as a function of alloy composition, excitation power and temperature. At low temperatures (T<100K), the PL spectra with several sub-peaks include localization emission as well as near-band-edge emission. On the other hand, the room-temperature PL properties for InxGa1-xAs1-yNy (x = 10.5% and 17.0% and y < 2%) are excellent with a single near-band-edge emission peak corresponding to their own Eo transition. The evolution of PL spectra with excitation power and temperature led to an insight into the nature of the near-band-edge states. The temperature dependence of integrated PL intensity indicates the presence of a large density of non-radiative recombination centers, showing a behavior characterized by two activation energies. Our results suggest that the origin of localization in InGaAsN alloy films is the alloy inhomogeneities of both In and N, which may results in the characteristic carrier dynamics.
AB - We report on the compositional and optical investigation of InGaAs(N) alloy films grown on GaAs (001) substrates by low-pressure (60 Torr) metalorganic vapor phase epitaxy (MOVPE). The alloy films with the room-temperature photoreflactance (PR) signal (Eo transition) wavelength range of 0.98-1.36 μm have been grown. The variation in PL characteristics of the InGaAs(N) alloy films has been investigated as a function of alloy composition, excitation power and temperature. At low temperatures (T<100K), the PL spectra with several sub-peaks include localization emission as well as near-band-edge emission. On the other hand, the room-temperature PL properties for InxGa1-xAs1-yNy (x = 10.5% and 17.0% and y < 2%) are excellent with a single near-band-edge emission peak corresponding to their own Eo transition. The evolution of PL spectra with excitation power and temperature led to an insight into the nature of the near-band-edge states. The temperature dependence of integrated PL intensity indicates the presence of a large density of non-radiative recombination centers, showing a behavior characterized by two activation energies. Our results suggest that the origin of localization in InGaAsN alloy films is the alloy inhomogeneities of both In and N, which may results in the characteristic carrier dynamics.
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M3 - Conference article
AN - SCOPUS:0038149599
SN - 0272-9172
VL - 744
SP - 665
EP - 670
JO - Materials Research Society Symposium - Proceedings
JF - Materials Research Society Symposium - Proceedings
T2 - Quantum Confined Semiconductor Nanostructures
Y2 - 2 December 2002 through 5 December 2002
ER -