Thallium lead iodide (TlPbI3) is a compound semiconductor characterized with wide band gap (2.3 eV) and high photon stopping power. Thus, TlPbI3 is an attractive material for fabrication of room temperature radiation detectors. In this study, TlPbI3 crystals were grown by the vertical Bridgman technique using zone-purified materials. The starting materials for the crystal growth were synthesized from commercially available TlI and PbI2 powders with nominal purity of 99.99%. Powder X-ray diffraction analysis was performed to evaluate chemical composition of the synthesized TlPbI3. In order to fabricate radiation detectors, the grown crystals were cut into several wafers using a wire saw. The wafers were then polished using Al2O3 abrasives. Electrodes were formed on the wafers by vacuum evaporation of gold. The resultant TlPbI 3 radiation detectors were evaluated by measuring their current-voltage characteristics and spectral responses. Most of TlPbI 3 detectors exhibited resistivities more than 1011 Ωcm. The TlPbI3 detectors were irradiated with α-particles (5.48 MeV) from a 241Am source or γ-rays (662 keV) from a 137Cs source. The TlPbI3 detectors exhibited a clear peak of 5.48 MeV α-particles. Although the 662 keV peak was not resolved in the energy spectra, increased counts above the noise spectrum were observed for the detectors. To our knowledge, it is the first time that TlPbI3 detectors exhibit α-particle spectra with a clear peak and γ-ray spectra.
|出版ステータス||Published - 2002|
|イベント||2002 IEEE Nuclear Science Symposium Conference Record - Norfolk, VA, United States|
継続期間: 2002 11月 10 → 2002 11月 16
|Other||2002 IEEE Nuclear Science Symposium Conference Record|
|Period||02/11/10 → 02/11/16|
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