Compound semiconductor, thallium bromide (TlBr), has been investigated as an optical and radiation detector material for use in X- and γ-ray spectroscopy. Single crystals of TlBr have been grown by the traveling molten zone method using zone-purified materials. Direct X- and γ-ray detectors have been fabricated from the TlBr crystals. The direct TlBr detectors have exhibited good spectrometric performances at room temperature. Polarization in TlBr detectors has been observed to deteriorate detector performance. Optical detectors for scintillation spectroscopy have been fabricated from the crystals by depositing an optically transparent electrode of indium-tin-oxide (ITO) on the front surface of the crystals. Quantum efficiency of the TlBr optical detectors has been high in wavelength region below ∼460 nm where scintillation emissions of LSO and GSO occur.
|出版ステータス||Published - 2002|
|イベント||2001 IEEE Nuclear Science Symposium Conference Record - San Diego, CA, United States|
継続期間: 2001 11月 4 → 2001 11月 10
|Other||2001 IEEE Nuclear Science Symposium Conference Record|
|City||San Diego, CA|
|Period||01/11/4 → 01/11/10|
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