The degradation of I-V characteristics under constant emitter-base reverse voltage stress in advanced selfaligned bipolar transistors was analyzed. Experimental analyses have been taken the stress field effect into account when predicting hot-carrier degradation. These analyses showed that base current starts to increase when the reverse voltage stress is about 3 V. The dependence of the base current change on reverse voltages of more than 3 V was also investigated experimentally, and equations expressing hot-carrier degradation in terms of the exponential dependence of excess base current on both reverse stress voltage and stress-enhancing voltage related to emitter-base breakdown voltage were derived.
|ジャーナル||IEICE Transactions on Electronics|
|出版ステータス||Published - 1996 1 1|
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering