Test structure and experimental analysis of bipolar hot-carrier degradation including stress field effect

Hiromi Shimamoto, Masamichi Tanabe, Takahiro Onai, Katsuyoshi Washio, Tohru Nakamura

研究成果: Conference contribution

2 被引用数 (Scopus)

抄録

The authors describe test transistors with different emitter-base breakdown voltages and an experimental analysis to predict hot-carrier degradation, including the stress field effect, in advanced high-speed self-aligned bipolar transistors. Test transistors were fabricated with different links of extrinsic to intrinsic bases, that is, transistors had different reverse I-V characteristics of the emitter-base junction. Experimental evidence showed that the dependence of the excess base current on stress can be expressed using emitter perimeter, reverse stress voltage, stress-enhancing voltage, and stress charge.

本文言語English
ホスト出版物のタイトルProc 92 Int Conf Microelectron Test Struct ICMTS 92
出版社Publ by IEEE
ページ111-114
ページ数4
ISBN(印刷版)0780305353
出版ステータスPublished - 1992
外部発表はい
イベントProceedings of the 1992 International Conference on Microelectronic Test Structures - ICMTS 92 - San Diego, CA, USA
継続期間: 1992 3月 161992 3月 19

出版物シリーズ

名前Proc 92 Int Conf Microelectron Test Struct ICMTS 92

Other

OtherProceedings of the 1992 International Conference on Microelectronic Test Structures - ICMTS 92
CitySan Diego, CA, USA
Period92/3/1692/3/19

ASJC Scopus subject areas

  • 工学(全般)

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