Ternary and quaternary wurtzite-type oxide semiconductors: New materials and their properties

研究成果: Conference contribution

抄録

β-NaFeO2 structure is an orthorhombic wurtzite-derived structure, of which the structural relationship with wurtzite structure is similar to that of the chalcopyrite sturcture with zincblende structure. β-LiGaO2, β-AgGaO2 and β-AgAlO2 are known as materials possessing the β-NaFeO2 structure; however, studies on the wurtzite-derived ternary oxide semiconductors are quite limited. Recently, we demonstrated the band gap engineering of zinc oxide by alloying with wurtzite-type β-AgGaO2, and the band gap of ZnO was reduced to 2.55 eV by this alloying. Very recently, a new wurtzite-type ternary compound, β-CuGaO2, was found out. Its energy band gap was 1.47 eV, and it exhibited p-type conduction. The first principle calculation indicated that β-CuGaO2 is a direct semiconductor; therefore it is suitable to use in optoelectronic devices. Taking the 1.47 eV of the band gap and p-type electronic conduction into account, β- CuGaO2 is a promising material for the thin film solar cell absorber. These new ternary oxide semiconductors possessing wurtzite-derived structure expanded the energy region that the oxide semiconductors cover into visible and near-infrared region.

本文言語English
ホスト出版物のタイトルOxide-Based Materials and Devices VI
編集者Ferechteh H. Teherani, David C. Look, David J. Rogers
出版社SPIE
ISBN(電子版)9781628414547
DOI
出版ステータスPublished - 2015
外部発表はい
イベントOxide-Based Materials and Devices VI - San Francisco, United States
継続期間: 2015 2月 82015 2月 11

出版物シリーズ

名前Proceedings of SPIE - The International Society for Optical Engineering
9364
ISSN(印刷版)0277-786X
ISSN(電子版)1996-756X

Other

OtherOxide-Based Materials and Devices VI
国/地域United States
CitySan Francisco
Period15/2/815/2/11

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学
  • コンピュータ サイエンスの応用
  • 応用数学
  • 電子工学および電気工学

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