Terahertz-wave generation using GaSe crystals with different carrier densities

Tadao Tanabe, K. Suto, J. Nishizawa, T. Sasaki, H. Yasuda, Yutaka Oyama

研究成果: Conference article査読

1 被引用数 (Scopus)

抄録

The frequency range and output power of THz-wave generated from GaSe crystals were investigated from the viewpoint of carrier density. THz-waves were generated from the low carrier density GaSe (1010 cm-3) in a wider frequency range than that from the high carrier density GaSe (10 14 cm-3). At frequency below 1.3 THz, the THz-wave output power increases with decreasing carrier density in GaSe. By using GaSe with lower carrier density, higher power and a wider frequency range of the THz-wave generation would be expected.

本文言語English
ページ(範囲)85-88
ページ数4
ジャーナルInstitute of Physics Conference Series
184
出版ステータスPublished - 2005 12 1
イベント31st International Symposium of Compound Semiconductors 2004 - Seoul, Korea, Republic of
継続期間: 2004 9 122004 12 16

ASJC Scopus subject areas

  • 物理学および天文学(全般)

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