We studied the receiver performance of two photoconductive antennas (bow tie and dipole antennas) fabricated on the same low-temperature-grown GaAs substrate to clarify the effect of the antenna structure and gate pulse intensity on terahertz wave detection. We observed the gate pulse intensity dependence of the temporal profiles of the terahertz waves or terahertz spectra. For both antennas, the sensitivity in the low-frequency regime (<0.5 THz) was enhanced compared to that in the high-frequency regime for large gate pulse intensities. This is because the carrier trap time increased due to the saturation of the GaAs defect levels. We also observed that the peak-to-peak amplitude of the terahertz wave detected by one antenna was not always larger than that detected by the other antenna, and the peak-to-peak amplitude of the bow tie antenna was larger (smaller) than that of the dipole antenna when the gate pulse intensity was high (low). This was explained by the gate pulse intensity dependence of the frequency-dependent detection sensitivity and also by the resonance frequency of the antenna structure.
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