Terahertz plasma-wave excitation in 80-nm gate-length GaAs MESFET by photomixing long-wavelength CW laser sources

T. Otsuji, Y. Kanamaru, H. Kitamura, S. Nakae

研究成果: Paper査読

6 被引用数 (Scopus)

抄録

The terahertz (THz) plasma resonant phenomena exhibited by semiconducting gallium arsenide based high electron mobility transistors (HEMT) is discussed. The terahertz excitation was performed by photomixing two sources in different frequency generations. The modulated DC drain-source components were measured using a lock-in amplifier. The measurements verified that the plasma resonance frequency is controlled by a wide terahertz range.

本文言語English
ページ97-98
ページ数2
出版ステータスPublished - 2001 1 1
外部発表はい
イベントDevice Research Conference (DRC) - Notre Dame, IN, United States
継続期間: 2001 6 252001 6 27

Other

OtherDevice Research Conference (DRC)
国/地域United States
CityNotre Dame, IN
Period01/6/2501/6/27

ASJC Scopus subject areas

  • 工学(全般)

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