Terahertz light emitting transistor based on current injection dualgate graphene-channel FET

Deepika Yadav, Youssef Tobah, Kenta Sugawara, Junki Mitsushio, Gen Tamamushi, Takayuki Watanabe, Alexander A. Dubinov, Maxim Ryzhii, Victor Ryzhii, Taiichi Otsuji

研究成果: Conference contribution

抄録

We report on amplified spontaneous broadband terahertz emission in 1-7.6 THz range at 100 K via current injection in a distributed-feedback dual-gate graphene-channel field effect transistor (DFB-DG GFET). The device exhibited a nonlinear threshold-like behavior with respect to the current-injection level. A precise DFB cavity design is expected to transcend the observed spontaneous broadband emission to single-mode THz lasing.

本文言語English
ホスト出版物のタイトル2017 42nd International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2017
出版社IEEE Computer Society
ISBN(電子版)9781509060481
DOI
出版ステータスPublished - 2017 10 12
イベント42nd International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2017 - Cancun, Quintana Roo, Mexico
継続期間: 2017 8 272017 9 1

出版物シリーズ

名前International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz
ISSN(印刷版)2162-2027
ISSN(電子版)2162-2035

Other

Other42nd International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2017
国/地域Mexico
CityCancun, Quintana Roo
Period17/8/2717/9/1

ASJC Scopus subject areas

  • エネルギー工学および電力技術
  • 電子工学および電気工学

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